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Rare-Earth based Oxide and Nitride thin films employing volatile homoleptic guanidinate precursors.
(The Electrochemical Society, 2009-10-09)
The application of the metalorganic compound tris(N,N'-diisopropyl-2-dimethlyamidoguanidinato)gadolinium(III) (1) as a precursor for MOCVD of Gd2O3 is discussed. Depositions were carried out in the presence of oxygen at ...