Now showing items 1-4 of 4
Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.
The application of two novel metalorganic complexes, namely the isostructural tris(N,N'diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N'-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) ...
Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors
(Royal Society of Chemistry, 2012)
Rare-Earth based Oxide and Nitride thin films employing volatile homoleptic guanidinate precursors.
(The Electrochemical Society, 2009-10-09)
The application of the metalorganic compound tris(N,N'-diisopropyl-2-dimethlyamidoguanidinato)gadolinium(III) (1) as a precursor for MOCVD of Gd2O3 is discussed. Depositions were carried out in the presence of oxygen at ...
Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition.
Thin films of HfGdOx and HfDyOx were deposited by metalorganic chemical vapor deposition (MOCVD) utilizing guanidinate precursors for Hf, Gd and Dy. The close match in the thermal properties of the precursors enabled the ...