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dc.contributor.authorLi., Qingjiangen
dc.contributor.authorSalaoru, Iuliaen
dc.contributor.authorAli, Khiaten
dc.contributor.authorProdromakis, Themistoklisen
dc.contributor.authorHui, Xuen
dc.date.accessioned2018-04-18T09:44:24Z
dc.date.available2018-04-18T09:44:24Z
dc.date.issued2017-04-25
dc.identifier.citationLi, Q., Salaoru, I., Khiat, A., Hui, X. and Prodromakis, T. (2017) Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices. Applied Physics A, 123:372.en
dc.identifier.issn1432-0630
dc.identifier.urihttp://hdl.handle.net/2086/16067
dc.description.abstractIn this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.en
dc.language.isoenen
dc.publisherSpringeren
dc.subjectTiO2en
dc.subjectBottom Electrodeen
dc.subjectResistive Switching Active Coreen
dc.subjectHigh Resistive Stateen
dc.titleCorrelated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devicesen
dc.typeArticleen
dc.identifier.doihttps://doi.org/10.1007/s00339-017-0991-5
dc.peerreviewedYesen
dc.funderEPSRC (EP/K017829/1)en
dc.funderNational Nature Science Foudation (61604177, 61471377)en
dc.funderNUDT Science Support Program (JC-15-04-02)en
dc.projectidEP/K017829/1en
dc.projectid61604177, 61471377en
dc.projectidJC-15-04-02en
dc.cclicenceCC-BY-NCen
dc.date.acceptance2017-02-12en
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.exception.ref2021codes254aen


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