Birth of silicon nanowires covered with protective insulating blanket

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dc.contributor.author Paul, Shashi en
dc.contributor.author Manjunathan, Krishna Nama en
dc.date.accessioned 2017-12-04T09:58:04Z
dc.date.available 2017-12-04T09:58:04Z
dc.date.issued 2017-09-20
dc.identifier.citation Manjunatha, K.N. and Paul, S. (2017) Birth of silicon nanowires covered with protective insulating blanket. MRS Communications, pp. 1-8 en
dc.identifier.uri http://hdl.handle.net/2086/14964
dc.description The file attached to this record is the author's final peer reviewed version. The Publisher's final version can be found by following the DOI link. en
dc.description.abstract Core–shell silicon–silicon oxide nanowires are synthesized at low temperatures using inorganic and organic compounds of a tin as a catalyst. In situ simultaneous one-dimensional growth of pristine silicon nanowires (SiNWs) using alloy catalyst is reported here. Such a development process generates a high-quality SiNW that is not determined by other atomic species in the plasma. A possible growth model is discussed to understand the synchronized precipitation of a SiNW core and an oxide shell. Nanowires grown here eliminate the additional fabrication steps to deposit anticipated oxide shell that is achieved by precipitation from the same catalyst that precipitates core nanowires. en
dc.language.iso en en
dc.publisher Cambridge University Press en
dc.relation.ispartofseries MRS communications;
dc.subject Silicon nanowires en
dc.subject Tin Oxide en
dc.subject Low temperature growth en
dc.subject Oxide-coated Silicon nanowires en
dc.subject PECVD en
dc.title Birth of silicon nanowires covered with protective insulating blanket en
dc.type Article en
dc.identifier.doi https://doi.org/10.1557/mrc.2017.95
dc.researchgroup Engineering and Physical Sciences Institute (EPsi) en
dc.peerreviewed Yes en
dc.funder N/A en
dc.projectid N/A en
dc.cclicence CC-BY-NC en
dc.date.acceptance 2017-09-05 en


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