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dc.contributor.authorCarta, Danielaen
dc.contributor.authorSalaoru, Iuliaen
dc.contributor.authorKhiat, Alien
dc.contributor.authorRegoutz, Annaen
dc.contributor.authorMitterbauer, Christophen
dc.contributor.authorHarrison, Nicholas M.en
dc.contributor.authorProdromakis, Themistoklisen
dc.date.accessioned2016-08-31T14:49:32Z
dc.date.available2016-08-31T14:49:32Z
dc.date.issued2016-07-22
dc.identifier.citationCarta, D. et al. (2016) Investigation of the Switching Mechanism in TiO2‑Based RRAM: A Two-dimensional EDX approach. Applied Materials and Interfaces, 8 (30), pp. 19605-19611en
dc.identifier.urihttp://hdl.handle.net/2086/12481
dc.descriptionThe file attached to this record is the author's final peer reviewed version. The Publisher's final version can be found by following the DOI link.en
dc.description.abstractThe next generation of non-volatile memory storage may well be based on resistive switching in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the fabrication of a variety of multi-state memory nanostructure devices. However, progress in their technological development has been inhibited by the lack of a thorough understanding of the underlying switching mechanisms. Here, we employed high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) combined with two-dimensional energy dispersive X-ray spectroscopy (2D EDX) to provide a novel, nanoscale view of the mechanisms involved. Our results suggest that the switching mechanism involves redistribution of both Ti and O ions within the active layer combined with an overall loss of oxygen that effectively render conductive filaments. Our study shows evidence of titanium movement in a 10 nm TiO2 thin-film through direct EDX mapping that provides a viable starting point for the improvement of the robustness and life time of TiO2-based resistive random access memory (RRAM).en
dc.language.isoenen
dc.publisherACS American Chemical Societyen
dc.subjectresistive memoryen
dc.subjecttitanium dioxideen
dc.subjectmemristorsen
dc.subjectenergy dispersive X-ray spectroscopyen
dc.subjectthin filmsen
dc.subjectresistive switchingen
dc.titleInvestigation of the switching mechanism in TiO2-based RRAM: a two-dimensional EDX approachen
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1021/acsami.6b04919
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.funderEPSRC (Engineering and Physical Sciences Research Council)en
dc.projectidEP/J00801X/1en
dc.projectidEP/K017829/1en
dc.cclicenceCC-BY-NC-NDen
dc.date.acceptance2016-07-13en
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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