Formation of misfit dislocations in strained-layer GaAs/InxGa1-xAs/GaAs heterostructures during post-fabrication thermal processing

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dc.contributor.author Liu, X. W
dc.contributor.author Hopgood, Adrian A.
dc.contributor.author Usher, B. F.
dc.contributor.author Wang, H.
dc.contributor.author Braithwaite, Nicholas (Nicholas St. J.)
dc.date.accessioned 2009-03-05T16:51:20Z
dc.date.available 2009-03-05T16:51:20Z
dc.date.issued 2003
dc.identifier.citation Liu, X.W., Hopgood, A.A., Usher, B.F., Wang, H. and Braithwaite, N.St.J. (2003) Formation of misfit dislocations in strained-layer GaAs/InxGa1-xAs/GaAs heterostructures during post-fabrication thermal processing. Journal of Applied Physics, 94, pp. 7496-7501. en
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/2086/1179
dc.language.iso en en
dc.title Formation of misfit dislocations in strained-layer GaAs/InxGa1-xAs/GaAs heterostructures during post-fabrication thermal processing en
dc.type Article en
dc.researchgroup Centre for Computational Intelligence


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